Fully monolithic 22 GHz-band AlGaAs/GaAs HBT oscillator
Abstract
The large signal design and performance is described for the fully monolithic 22 GHz-band oscillator implemented using a selfaligned AlGaAs/GaAs heterojunction bipolar transistor. The developed oscillator has exhibited an output power of 6.2 dBm at 22.16 GHz with a collector efficiency of 9.5 percent, and phase noise of -78 dBc/Hz at 100 kHz off-carrier under free-running conditions. These results were in good agreement with the designed results obtained using a harmonic balance simulator.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1991
- DOI:
- 10.1049/el:19911156
- Bibcode:
- 1991ElL....27.1862H
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Heterojunction Devices;
- Integrated Circuits;
- Microwave Oscillators;
- Self Alignment;
- Capacitance-Voltage Characteristics;
- Equivalent Circuits;
- Gallium Arsenides;
- Harmonic Oscillators;
- Electronics and Electrical Engineering