Millimetre wave performance of carbon-doped-base AlGaAs/GaAs HBTs
Abstract
AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with f(T) of 52 GHz and f(max) of 85 GHz have been obtained using a heavily-carbon-doped base layer. The HBT epitaxial layers were prepared by low-pressure MOVPE using carbon tetrachloride as the carbon source. To the author's knowledge, this work reports the first carbon-doped AlGaAs/GaAs HBTs with f(T) and F(max) greater than 50 GHz.
- Publication:
-
Electronics Letters
- Pub Date:
- June 1991
- DOI:
- 10.1049/el:19910714
- Bibcode:
- 1991ElL....27.1145Y
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Carbon;
- Heterojunction Devices;
- Millimeter Waves;
- Network Synthesis;
- Epitaxy;
- Gallium Arsenides;
- Semiconductor Devices;
- Electronics and Electrical Engineering