Comparison of theoretical and experimental 60 GHz silicon IMPATT diode performance
Abstract
Theoretical and experimental investigations have been carried out for V-band silicon double drift flat profile and double low-high-low (DLHL) IMPATT diodes. The theoretical designs have been used for the experimental realization of the diodes for CW operation. The epitaxial layers were grown by silicon molecular beam epitaxy which enabled the realization of the complex DLHL profile at millimeter-wave frequencies in the silicon material system for the first time. The maximum obtained conversion efficiency is 14.3 percent. A comparison of theoretical and experimental results for both types of diodes shows general agreement and the superiority of the DLHL structure.
- Publication:
-
Electronics Letters
- Pub Date:
- June 1991
- DOI:
- 10.1049/el:19910652
- Bibcode:
- 1991ElL....27.1049B
- Keywords:
-
- Avalanche Diodes;
- Molecular Beam Epitaxy;
- Silicon Junctions;
- Very High Frequencies;
- Current Density;
- Millimeter Waves;
- Substrates;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering