p-channel modulation-doped GaSb field-effect transistors
Abstract
GaSb p-channel modulation-doped FETs based on a p-AlSb(0.9)As(0.1)/p-AlSb/GaSb structure have been fabricated. Transconductances as high as 50 ms/mm at room temperature and 220 to 283 ms/mm at 77 K were obtained for 1-micron-gate-length devices. These 77 K transconductances represent the highest values reported for any compound p-channel heterojunction FETs.
- Publication:
-
Electronics Letters
- Pub Date:
- February 1991
- DOI:
- 10.1049/el:19910297
- Bibcode:
- 1991ElL....27..472L
- Keywords:
-
- Gallium Antimonides;
- Heterojunction Devices;
- Modfets;
- P-Type Semiconductors;
- Transconductance;
- Charge Carriers;
- Transport Properties;
- Electronics and Electrical Engineering