Measurements of proton upset induced in CMOS devices: Synthesis of CEA studies
Abstract
The behavior of electronic components submitted to the type of radiation encountered in Earth orbits or by planetary probes is studied. A synchrotron designed for basic research in the physics of light particles and heavy ions of intermediate energy, SATURNE, is used in the study. The energy supplied to the protons lies between 0.2 and 2.9 GeV with an intensity larger than 10 exp 12 protons per cycle. During the experiment and in order to lower the proton energy under 200 MeV, an Al absorber is used. The flux measurement is obtained by two different methods: measurement by activation and measurement by counting (scintillator coupled with a pressurized module). The increased number of upsets during irradiation is determined on line, for each cycle, by a tester using a comparative hardware method. The upset cross sections obtained for a variety of static memories using the method described are presented.
- Publication:
-
ESA Special Publication
- Pub Date:
- March 1991
- Bibcode:
- 1991ESASP.313..419M
- Keywords:
-
- Cmos;
- Memory (Computers);
- Proton Damage;
- Proton Irradiation;
- Radiation Effects;
- Radiation Tolerance;
- Single Event Upsets;
- Airborne/Spaceborne Computers;
- Earth Orbital Environments;
- Environment Simulation;
- Synchrotron Radiation;
- Electronics and Electrical Engineering