Ion beam characterization of plasma oxide grown on TiSi x ( x 2)
Abstract
In this work we report results on the plasma oxidation of TiSi x films, deposited over Si or over a SiO 2 diffusion barrier by cosputtering with x 2, in the temperature range of 500 to 700°C. The oxide and silicide films were characterized by the complementary use of Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) through the reaction 16O(d, p) 17O ∗. The results obtained show that the plasma oxidation of the Si-rich TiSi x films gives a SiO 2 overlayer, free of metal at least up to the detectable levels of RBS for Ti, in the whole temperature range scanned. At the highest temperature tested, that is 700°C, the presence or not of the SiO 2 diffusing barrier on the Si substrate, affects both the shape of the remaining silicide, and the oxidation rate.
- Publication:
-
Applied Surface Science
- Pub Date:
- November 1991
- DOI:
- 10.1016/0169-4332(91)90271-K
- Bibcode:
- 1991ApSS...53..243C