Y1Ba2Cu3O6 + delta growth on thin Y-enhanced SiO2 buffer layers on silicon
Abstract
SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O6+δ thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O6+δ film growth on silicon with thin buffer layers has shown c orientation and Tc0=78 K.
- Publication:
-
Applied Physics Letters
- Pub Date:
- October 1991
- DOI:
- 10.1063/1.106057
- Bibcode:
- 1991ApPhL..59.2323R
- Keywords:
-
- High Temperature Superconductors;
- Laser Applications;
- Mixed Oxides;
- Superconducting Films;
- Yttrium Oxides;
- Barium Oxides;
- Copper Oxides;
- Silicon Oxides;
- Substrates;
- Thin Films;
- X Ray Diffraction;
- Solid-State Physics