Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)B substrates
Abstract
CdTe films were grown in both the (211) and (133) orientations on GaAs(211)B substrates by molecular beam epitaxy. The orientation of the epitaxy is dependent on the thermal cleaning process. Studies of these films included in situ reflected high-energy electron diffraction, x-ray double-crystal diffractometry, transmission electron microscopy, and photoluminescence, which revealed high quality for both CdTe growth orientations, and especially for the CdTe(133). The lattice of the CdTe(211) growth tilts 3° with respect to its GaAs(211) substrate about the CdTe[01¯1]//GaAs[01¯1] coincidence axis. The CdTe(133) has no tilt with respect to its substrate, and its coincidence axes are CdTe[01¯1]//GaAs[01¯1] and CdTe[61¯1¯]//GaAs[1¯11].
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 1991
- DOI:
- 10.1063/1.105041
- Bibcode:
- 1991ApPhL..58.1988L
- Keywords:
-
- Cadmium Tellurides;
- Crystal Structure;
- Gallium Arsenides;
- Molecular Beam Epitaxy;
- Photoluminescence;
- Semiconducting Films;
- Crystal Growth;
- Electron Diffraction;
- Electron Microscopy;
- Substrates;
- Solid-State Physics