Transient annealing characterization of irradiated MOSFETS
Abstract
The electrical response of metal-oxide-silicon (MOS) technologies to incident nuclear (especially photon) radiation is a very complex, time-dependent function. This report reviews the physical processes governing this response and then experimentally examines them with the aid of the TATS-400 (Transient Annealing Test System). MOSFET responses to steady-state and pulsed photon and electron beams are characterized in terms of such parameters as threshold voltage shift and interface and oxide trap densities. The results show good agreement between experiment and theory in terms of the expected trends. However in order to conduct more meaningful tests, devices with much better-known geometries must be procured.
- Publication:
-
Unknown
- Pub Date:
- January 1990
- Bibcode:
- 1990taci.rept.....C
- Keywords:
-
- Annealing;
- Field Effect Transistors;
- Irradiation;
- Photon Beams;
- Radiation Effects;
- Canada;
- Electron Beams;
- Electrons;
- Gamma Rays;
- Incident Radiation;
- Nuclear Radiation;
- Oxides;
- Photons;
- Radiation Dosage;
- Steady State;
- Threshold Voltage;
- Time Dependence;
- Trends;
- Solid-State Physics