Diamond growth at low substrate temperatures
Abstract
Diamond films are deposited on silicon wafers at a temperature of less than 600 C by a microwave plasma-assisted chemical vapor deposition process using methane in hydrogen as a source of carbon.
- Publication:
-
Patent Application Sandia National Labs
- Pub Date:
- April 1990
- Bibcode:
- 1990snl..rept.....H
- Keywords:
-
- Diamonds;
- Hydrogen;
- Ionization;
- Low Temperature;
- Methane;
- Plasmas (Physics);
- Substrates;
- Thin Films;
- Vapor Deposition;
- Electron Microscopy;
- Inventions;
- Microwaves;
- Patent Applications;
- Radio Frequency Heating;
- Raman Spectra;
- Scanning;
- Solid-State Physics