Growth, characterization and device development in monocrystalline diamond films
Abstract
Diamond films were deposited on various polycrystalline metal and (001) Si substrates by biased hot filament chemical vapor deposition, the films characterized by TEM, x ray diffraction and Raman and Auger spectroscopies and devices (specifically IMATTs and MESFETs) modeled from the properties of diamond. Films grown on Si, Ni and W exhibited the highest quality diamond films from the viewpoint of Raman characterization. The model of the MESFET device with gate length = 1 micron and width = 1 mm showed that significant degradation in RF performance is not expected at 10 GHz.
- Publication:
-
Quarterly Letter Report
- Pub Date:
- September 1990
- Bibcode:
- 1990ncsu.reptS....D
- Keywords:
-
- Diamond Films;
- Diamonds;
- Polycrystals;
- Thin Films;
- Chemical Reactions;
- Electronic Equipment;
- Radio Frequencies;
- Raman Spectra;
- Single Crystals;
- Vapor Deposition;
- X Ray Diffraction;
- Solid-State Physics