Patterning and overgrowth of nanostructure quantum well wire arrays by LP-MOVPE (low pressure-metalorganic vapor phase epitaxy)
Abstract
Nanometer scale GaAs Quantum Well Wire (QWW) arrays with lateral dimensions in the range of 10 to 70 nm and a period of 200 nm have been fabricated in the GaAs/AlGaAs system using x-ray nanolithography patterning and overgrowth by a low pressure Metalorganic Vapor Phase Epitaxy (LP-MOVPE) technique. The QWW structures were either fabricated by post-growth patterning of a thin GaAs film on a AlGaAs-coated substrate followed by AlGaAs deposition, or by continuous in situ deposition of a GaAs/AlGaAs QWW structure on a prepatterned GaAs substrate. Although cross-sectional transmission electron microscopy showed no structural defects in either QWW fabrication process, photoluminescence (PL) was only observed in the in situ-deposited structures. Strong polarization dependence of the PL peak with respect to wire orientation has been confirmed and evidence of lateral confinement was observed.
- Publication:
-
Presented at the 5th International Conference on Metalorganic Vapor Phase Epitaxy
- Pub Date:
- June 1990
- Bibcode:
- 1990mvpe.conf...18K
- Keywords:
-
- Aluminum Gallium Arsenides;
- Organometallic Compounds;
- Quantum Wells;
- Semiconductors (Materials);
- Thin Films;
- Vapor Phase Epitaxy;
- Wire;
- Electron Microscopy;
- Etching;
- Low Pressure;
- Optical Polarization;
- Photoluminescence;
- Substrates;
- X Rays;
- Solid-State Physics