Improving the performance of InAs(1-x)Sb(x)/InSb infrared detectors grown by metal organic chemical vapor deposition

Diethylselenium and tetraethyltin were investigated as n-type dopants for InSb. Carrier concentrations between 6 x 10(exp 15) and 4 x 10(exp 18)/cu cm with 77 K mobilities ranging from 75,000 to 10,000 sq cm/Vs were achieved for Sn doped InSb. Triethylantimony and trimethylindium were used to grow InSb over the temperature range of 410 to 470 C with a decrease in the p-type background occurring at 410 C. Diodes were prepared using tetraethyltin, trimethylindium and trimethylantimony at 470 C. The resulting current-voltage characteristics are improved over those of diodes grown previously using dimethyltellurium. SIMS measurements indicate a diffusion coefficient for Sn in InSb at 470 C that is approx. 1 x 10(exp -15) sq cm/s.