Luminescence and lasing in II-VI semiconductors
Abstract
The objective of this contract was to develop a method for growth of bulk semiconducting material, suitable for monolithic infrared focal plane detectors, light emitting diodes, and laser structures. The project focused on narrow band gap HgMnTe alloys, semimagnetic semiconductors. HgMnTe is an infrared detector material with properties similar to those of HgCdTe in particular, HgMnTe electroluminescence more efficiently than HgCdTe, and p-type HgMnTe has higher conductivity than comparable p-HgCdTe; both features are advantageous in device applications.
- Publication:
-
Massachusetts Inst. of Tech. Report
- Pub Date:
- August 1990
- Bibcode:
- 1990mit..reptQ....W
- Keywords:
-
- Alloys;
- Focal Plane Devices;
- Lasing;
- Luminescence;
- Mercury Cadmium Tellurides;
- Semiconductors (Materials);
- Infrared Detectors;
- Lasers;
- Light Emitting Diodes;
- Narrowband;
- Solid-State Physics