The Passivating Effect of Si(100)-As Surface and the Adsorption of Oxygen
Abstract
The following sections are included:
* Introduction * Experimental Details * Equipment * Preparation of atomically clean Si(100) surface * Experimental procedure * Results and Analysis * The contaminations of C and O on Si(100) surface * Oxygen adsorption * Analysis of oxygen adsorption — the sticking coefficient S(θ) * Discussion * REFERENCES- Publication:
-
Lattice Dynamics and Semiconductor Physics: Festchrift for Professor Kun Huang. Edited by XIA J B ET AL. Published by World Scientific Publishing Co. Pte. Ltd
- Pub Date:
- 1990
- DOI:
- 10.1142/9789814368346_0032
- Bibcode:
- 1990ldsp.book..579Z