Experimental findings on self-recovery and improvement of representative parameters of some semiconductor devices as irradiated in fast neutron flux
Abstract
Semiconductor devices (Si-Li detectors, diodes, transistors and integrated circuits) were irradiated at a nuclear reactor up to 2.8 x 10(exp14)n x cm(sup -2)(E sub n greater than 0.5 MeV) anda 14 MeV neutron generator up to 10(exp 13) n x cm(sup -2). While testing radiation damage it was seen that some Si-Li detectors and integrated circuits showed the effects of self-recovery and improvement of electrical characteristics.
- Publication:
-
Unknown
- Pub Date:
- 1990
- Bibcode:
- 1990efsr.rept.....H
- Keywords:
-
- Fast Neutrons;
- Irradiation;
- Neutron Flux Density;
- Radiation Detectors;
- Radiation Effects;
- Flux (Rate);
- Integrated Circuits;
- Semiconductor Diodes;
- Transistors;
- Solid-State Physics