Microelectronic device reliability
Abstract
Research on pulsed current electromigration in fine-line very large scale integration (VLSI) metallization was performed. A test structure containing 6 sample lines was designed in accordance with NBS recommendations (Ca. 1987) fabricated by an industrial firm and supplied to Clemson University for continued electromigration research.
- Publication:
-
Final Report
- Pub Date:
- January 1990
- Bibcode:
- 1990cusc.reptQ....H
- Keywords:
-
- Chips (Electronics);
- Ion Currents;
- Microelectronics;
- Migration;
- Performance Tests;
- Isotope Separation;
- Pulses;
- Very Large Scale Integration;
- Electronics and Electrical Engineering