Al 2O 3 on Si(100) and Ge(100)
Abstract
Sintered alumina was evaporated onto Si(100) and Ge(100) substrates by means of an electron beam evaporator. The samples were investigated by Auger electron spectroscopy, low energy electron diffraction and photoelectron spectroscopy. The deposited films were found to consist of stoichiometric Al 2O 3 and to grow in islands, which coalesce for coverages larger than seven monolayers, approximately. All Al 2O 3 deposits could be shown to be amorphous.
- Publication:
-
Surface Science
- Pub Date:
- January 1990
- DOI:
- 10.1016/0039-6028(90)90423-6
- Bibcode:
- 1990SurSc.225...58S