Two terminal CuInSe2 based cascade cells
Abstract
This report presents results and conclusions of a two-year research program on multijunction thin-film solar cells using a CuInSe2 heterojunction for the low-band-gap bottom cell and either an a-Si:H (E(sub g) = 1.8 eV) or a CdTe (E(sub g) = 1.5 eV) heterojunction for the high-band-gap top cell in a monolithic two-terminal cascade structure. Photochemical vapor deposition was used to deposit a-Si cells. The presence of a CuInSe2/(CdZn)S cell in the a-Si deposition reactor did not introduce contaminants or adversely affect the performance of conventional p-i-n cells. Procedures were developed for fabricating monolithic cascade devices with the configuration ITO/a-Si(n-i-p)/ZnO/(CdZn)S/CuInSe2/Mo/glass. A prototype two-terminal a-Si/CuInSe2 cascade cell had an open-circuit voltage over IV and an efficiency of 5.8 percent. Physical vapor deposition with extrinsic doping was studied as a preparation technique for depositing low-resistivity p-type CdTe on transparent contact materials at low temperatures.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- July 1990
- Bibcode:
- 1990STIN...9029697B
- Keywords:
-
- Fabrication;
- Glass;
- High Temperature;
- Interface Stability;
- Optical Properties;
- Quantum Efficiency;
- Reflectance;
- Copper Compounds;
- Indium Compounds;
- Selenium Compounds;
- Solar Cells;
- Substrates;
- Sulfur Compounds;
- Surface Properties;
- Thin Films;
- Energy Production and Conversion