Direct spectroscopy of electron and hole scattering
Abstract
A new spectroscopy has been developed for the first direct probe of carrier-carrier scattering in materials. This spectroscopy provides spatial and energy resolution of the scattering process and has been used to investigate transport, scattering phenomena, and hot-carrier creation in two important metal-semiconductor systems. A theoretical treatment of this scattering spectroscopy yields excellent agreement with experimental spectra and provides direct evidence that carrier-carrier scattering is a dominant energy-loss mechanism in hot-carrier transport.
- Publication:
-
Physical Review Letters
- Pub Date:
- May 1990
- DOI:
- Bibcode:
- 1990PhRvL..64.2679B
- Keywords:
-
- Carrier Mobility;
- Electron Scattering;
- Electron Spectroscopy;
- Heterojunction Devices;
- Scanning Tunneling Microscopy;
- Semiconductors (Materials);
- Gallium Arsenides;
- Gold;
- Hole Mobility;
- Volt-Ampere Characteristics;
- Solid-State Physics;
- 72.15.-v;
- 61.16.Di;
- 68.35.-p;
- Electronic conduction in metals and alloys;
- Solid surfaces and solid-solid interfaces: Structure and energetics