Insulated Gate Bipolar Transistors (IGBT) modelization for circuit simulation and utilization in pulse modulated inverters
Abstract
A model is developed for the IGBT, which can be used on components for the simulation of power electronics circuits. The use of IGBT in a typical utilization case is examined, e.g., a quick switching pulse inverter for the control of asynchronous machines. The starting point of IGBT model production is an equivalent circuit from a bipolar transistor and from a controlling field effect transistor. The stationary behavior of the bipolar transistor is described by analytically produced nonlinear equations. Available model equations are collected in a dynamic IGBT model. New and modified processes are developed, with which all relevant IGBT parameters can be obtained by electrical measurements in simple test circuits. The validity of the developed IGBT model is demonstrated, using typical load conditions, by comparison with simulation and measurement results.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1990
- Bibcode:
- 1990PhDT........59B
- Keywords:
-
- Bipolar Transistors;
- Circuits;
- Equivalent Circuits;
- Field Effect Transistors;
- Gates (Circuits);
- Inverters;
- Mathematical Models;
- Nonlinear Equations;
- Simulation;
- Electronics and Electrical Engineering