Highly Uniform Si-Doped GaAs Epitaxial Layers Grown by MBE Using a TEG, Arsenic, and Silicon System
Abstract
We studied the lateral thickness uniformity and carrier concentration in 3-inch Si-doped epitaxial layers grown by gas-source MBE using triethylgallium, arsenic, and silicon. A variation in thickness and carrier concentration of ± 1% over a 70-mm diameter was obtained by rotating the substrate. We proved that the thickness distribution depends primarily on the angular distribution of TEG molecules, as with the metal gallium source.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- July 1990
- DOI:
- 10.1143/JJAP.29.1248
- Bibcode:
- 1990JaJAP..29.1248O