Continuous-wave laser doping of micrometer-sized features in gallium arsenide using a dimethylzinc ambient
Abstract
We present a single-step process for the direct writing of micron-scale Zn-doped regions on GaAs substrates. A focused continuous-wave Ar+ laser drives both pyrolysis of the dimethylzinc source gas and solid-state diffusion of the Zn atoms into the GaAs. Secondary ion mass spectroscopy (SIMS) has been used to measure the dopant depth profiles as a function of laser-induced temperature. Raman microprobe spectroscopy has been used to corroborate the SIMS measurements and measure the lateral extent of micron-sized doped lines. In a preliminary measurement of electrical activation, Al contacts to n-GaAs have been modified using the process.
- Publication:
-
Journal of Vacuum Science Technology A: Vacuum Surfaces and Films
- Pub Date:
- May 1990
- DOI:
- 10.1116/1.576775
- Bibcode:
- 1990JVSTA...8.1618L