CuInSe2 thin films by dc and pulse-plated electrodeposition
Abstract
CuInSe2 thin films were prepared by electrodeposition from aqueous solution, containing CuSO4, InCl3, and SeO2 under dc step pulse-voltage on dc, and pulse-plating conditions. The films were characterized by scanning electron microscopy, energy dispersive spectrometry, and X-ray diffraction. The influence of deposition technique on film composition, morphology, and structure were studied. Heat treatment of pulse-plated films under vacuum resulted in the formation of CuInSe2 with single-phase chalcopyrite structure.
- Publication:
-
Journal of Materials Science and Materials Electronics
- Pub Date:
- September 1990
- Bibcode:
- 1990JMSME...1..123B
- Keywords:
-
- Copper Selenides;
- Electrodeposition;
- Electroplating;
- Indium Compounds;
- Semiconductors (Materials);
- Thin Films;
- Aqueous Solutions;
- Direct Current;
- Electron Microscopy;
- X Ray Diffraction