High Frequency Capacitance-Voltage Characteristics of Thermally Grown SiO2 Films on β - SiC
Abstract
Silicon dioxide films grown under dry and wet oxidation environment on beta-SiC films have been studied. The beta-SiC films had been heteroepitaxially grown on both on-axis and 2-deg off-axis (001) Si substrates. Capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures were measured in a frequency range of 10 kHz to 1 MHz. From these measurements, the interface trap density and the effective fixed oxide charge density were observed to be generally lower for off-axis samples.
- Publication:
-
Journal of the Electrochemical Society
- Pub Date:
- January 1990
- DOI:
- 10.1149/1.2086370
- Bibcode:
- 1990JElS..137..221T
- Keywords:
-
- Body Centered Cubic Lattices;
- Capacitance-Voltage Characteristics;
- Crystal Growth;
- Semiconductors (Materials);
- Silicon Carbides;
- Silicon Oxides;
- Ceramic Coatings;
- High Frequencies;
- Oxide Films;
- Thermal Conductivity;
- Solid-State Physics