Radiation tolerant GaAs MESFET with a highly-doped thin active layer grown by OMVPE
Abstract
A novel GaAs MESFET structure with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total gamma -ray dose were found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The structure was designed from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total gamma -ray dose. It was successfully demonstrated by utilizing a highly doped thin active layer (4*10/sup 18/ cm/sup -3/, 100 AA) grown by organometallic vapor-phase epitaxy (OMVPE). This MESFET can withstand a dose ten times higher (1*10/sup 9/ rads(GaAs)) than a conventional one can.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1990
- DOI:
- 10.1109/23.101231
- Bibcode:
- 1990ITNS...37.2071N
- Keywords:
-
- Doped Crystals;
- Electrical Properties;
- Field Effect Transistors;
- Gallium Arsenides;
- Radiation Tolerance;
- Vapor Phase Epitaxy;
- Carrier Density (Solid State);
- Carrier Mobility;
- Gamma Rays;
- Hall Effect;
- Organometallic Compounds;
- Electronics and Electrical Engineering