Double quantum well resonant tunnel diodes
Abstract
Double quantum well resonant tunnel diodes are demonstrated in InAlAs/InGaAs for the first time. Peak-to-valley ratios of greater than 70:1 at room temperature and 125:1 below 200 K are observed.
- Publication:
-
Applied Physics Letters
- Pub Date:
- September 1990
- DOI:
- 10.1063/1.103503
- Bibcode:
- 1990ApPhL..57.1260D
- Keywords:
-
- Quantum Wells;
- Resonant Tunneling;
- Tunnel Diodes;
- Current Density;
- Gallium Arsenides;
- Indium Phosphides;
- Molecular Beam Epitaxy;
- Electronics and Electrical Engineering