In situ growth of superconducting YBa2Cu3O7 - delta thin films on Si with conducting indium-tin-oxide buffer layers

doi:10.1063/1.104221

In situ growth of superconducting YBa₂Cu₃O_{7 - delta} thin films on Si with conducting indium-tin-oxide buffer layers

Superconducting YBa₂Cu₃O_7-δ (YBCO) thin films have been grown in situ on Si with conducting indium-tin-oxide (ITO) buffer layers. ITO allows YBCO to be electrically connected to the underlying Si substrate. Both the YBCO film and ITO buffer layer, grown by ion beam sputtering, are textured and polycrystalline with a combined room- temperature resistivity of about 2 mΩ cm. Superconducting onsets are 92 K with zero resistance at 68 K.

Publication:

Applied Physics Letters

Pub Date:

September 1990

DOI:

10.1063/1.104221

Bibcode:

1990ApPhL..57.1146K

Keywords:

Copper Oxides;
Crystal Growth;
High Temperature Superconductors;
Mixed Oxides;
Silicon Films;
Superconducting Films;
Barium Oxides;
Ito (Semiconductors);
Superconductivity;
Yttrium Oxides;
Solid-State Physics

ADS

In situ growth of superconducting YBa2Cu3O7 - delta thin films on Si with conducting indium-tin-oxide buffer layers

Abstract

In situ growth of superconducting YBa₂Cu₃O_{7 - delta} thin films on Si with conducting indium-tin-oxide buffer layers