Raman spectroscopic studies of planar gettering effects
Abstract
Raman scattering spectroscopy is used to study the elastic stress distribution in the epitaxial silicon operating areas in the vicinity of planar getter areas, the latter being created by previous ion implantation of the substrate. Data concerning the effect of the operating element size and the dose of implantation into the getter area are obtained. The results are compared with those of X-ray topographic analysis of the structures.
- Publication:
-
Applied Physics A: Materials Science & Processing
- Pub Date:
- September 1990
- DOI:
- 10.1007/BF00324011
- Bibcode:
- 1990ApPhA..51..264A
- Keywords:
-
- PACS 78.30.Gt;
- 78.30.Gt