Proceedings of the conference on Hot Carriers in Semiconductors
Abstract
Topics contained included: Resonant Tunneling in Heterojunction Barriers; Multivalued hot electron distributions as spontaneous symmetry breaking; Intersubband emission from superlattices; Nonequilibrium effects in quasi-one dimensional weak localization; Hot electron transport in high-lying minibands in semiconductor superlattices; High-field transport and NDR with hot phonons in degenerate semiconductors; Magneto-phonon resonances in the effective temperature of photo-excited carriers in GaAs/(Ga,Al)As quantum wells; The one-dimensional quantized ballistic resistance in GaAs/AlGaAs heterojunctions with varying experimental conditions; Femtosecond excitations in Modulation-Doped quantum Wells; Picosecond relaxation in quantum well systems; Plasma instabilities in quasi two-dimensional electron gases; Gamma intervalley-interlayer scattering rates in type 2 GaAs/AlAs superlattices; Photoluminescence of hot electrons in A3B5 semiconductors and QW structures; Determination of scattering times on the femtosecond time scale; Hot Carriers in Bulk Materials; Quantum Transport and Modeling; Resonant Tunneling; Chaos, Instabilities, and Impact Ionization; and Semiconductor Devices.
- Publication:
-
Conference held in Scottsdale
- Pub Date:
- November 1989
- Bibcode:
- 1989scaz.conf...23F
- Keywords:
-
- Aluminum Gallium Arsenides;
- Conferences;
- Gallium Arsenides;
- Heterojunctions;
- Quantum Electronics;
- Quantum Theory;
- Semiconductor Devices;
- Electron Distribution;
- Electron Tunneling;
- High Energy Electrons;
- High Temperature Gases;
- High Temperature Plasmas;
- Nonequilibrium Ionization;
- Nonequilibrium Plasmas;
- Photoluminescence;
- Plasma Resonance;
- Superlattices;
- Symmetry;
- Solid-State Physics