Energy relaxation of light holes in InAs(.15)Sb(.85)/InSb multiple quantum wells
Abstract
The energy relaxation rate of light in-plane in InAs(.15)Sb(.85)/InSb quantum wells was measured using a Shubnikov-de Haas technique. In this Type 2 system, the holes reside in the InSb layers; strain reverses the heavy-light hole ordering and thus light holes are the charge carriers. The samples consist of 20 to 100 InAs(.15)Sb(.85)/InSb periods 100/200 A thick. The InAsSb barriers are doped with Be. The total carrier concentration is obtained from Hall data. Shubnikov-de Haas oscillation amplitudes are measured and used to determine the light hole temperature for a given applied power. The steady state power per carrier is equated to the energy relaxation rate to determine the carrier temperature T(sub H). Data are compared with theory and experiment for light holes in InGaAs/GaAs quantum wells.
- Publication:
-
Presented at the 6th International Conference on Hot Carriers in Semiconductors
- Pub Date:
- 1989
- Bibcode:
- 1989hcs..conf...23T
- Keywords:
-
- Arsenides;
- Charge Carriers;
- Holes (Electron Deficiencies);
- Indium Antimonides;
- Quantum Wells;
- Hole Distribution (Electronics);
- Molecular Relaxation;
- Oscillations;
- Solid-State Physics