Investigation of heterojunctions in the system SnO2-CdGeP2
Abstract
Photosensitivity spectra of heterojunctions on the basis of SnO2 layers and n- and p-type conductivity CdGeP2 crystals are investigated in natural and linearly polarized radiation in the 160 360 K temperature range. Temperature coefficients of the change in interband energies of A- and B-junctions are determined. The temperature dependence of the photosensitivity of the obtained n-n and n-p-heterojunctions is studied.
- Publication:
-
Soviet Physics Journal
- Pub Date:
- July 1989
- DOI:
- 10.1007/BF00896123
- Bibcode:
- 1989SvPhJ..32..520L