The Hall Effect in the High-Transition Temperature Superconducting Copper Oxides.
Abstract
This thesis is a study of the Hall effect in the high transition temperature superconducting copper oxides. The normal-state Hall effect was used to systematically probe the electronic structure of compounds with a range of compositions. By raising the chemical potential through chemical doping and measuring the carrier density, it is discovered that the known hole-like high-T_{rm c} materials appear to have only a single band. A central conclusion of the thesis is the universality of strong-correlation effects on the electronic structure. Specifically, a band-gap, the Mott-Hubbard gap, due to strong on-site Coulomb repulsion is apparent from the Hall effect (chapters 1,2) in three major families of high T_ {rm c} materials: La_ {rm 2-x}Sr_{ rm x}CuO_4, YBa _2Cu_3O _7, and Bi_2Sr _2CaCu_2O _8. In chapter 6, the anomalous temperature-dependence of the Hall effect is also shown to be universal to these materials--and correlated with superconductivity. Multi -band effects and conventional skew-scattering mechanisms are unlikely and the Hall anomaly appears inherently related to the unconventional normal state of these materials. The final chapter is a survey of publications and preprints by other research groups on topics related to the Hall effect in high-T_{rm c} materials.
- Publication:
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Ph.D. Thesis
- Pub Date:
- 1989
- Bibcode:
- 1989PhDT.......151C
- Keywords:
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- Physics: Condensed Matter