Digital capacity transient spectroscopy of deep structure defects in III-V-Semiconductor structures

The advantages of Deep Level Transient Spectroscopy (DLTS) methods with digital transients were shown. Different evaluation methods were estimated, such as simulated Boxcar processes with many varied time windows and adaptation of multiexponential theory curves at the measurement data with modulation functions. Measurements were made for n minus and p minus conducting GaAs, n minus and p minus conducting In 0.53 Ga0.47As, N minus In 0.53 Ga0.47As-MOS structures and n minus In P. The samples were doped with vanadium, tungsten, titanium and iron. Measurements with n-Ga-As-Molecular Beam Epitaxy (MBE) layers showed a nickel-impurity by the growth discontinuity. A defect was found in all MBE layers. With Fe-doped and nondoped p+/n minus In GaAs diodes the energetic level of this transient metal in InGaAs can be estimated. InGaAs-MOS structures and contacts with oxide intermediate layers on n minus In P showed a dominating influence of the oxide on the measurements results.