An increase in the mobility of two-dimensional electrons at the AlAs/GaAs heterojunction in comparison with AlGaAs/GaAs in heterostructures with selective delta alloying
Abstract
The properties of heterostructures with selective delta alloying having different potential profiles near the region of two-dimensional electron gas formation are compared with particular reference to results obtained for AlGaAs/GaAs heterostructures. Among AlGaAs/GaAs heterostructures with selective delta alloying, a structure with an AlAs spacer is shown to be particularly promising for the fabrication of HEMT transistors based on its transport characteristics.
- Publication:
-
Pisma v Zhurnal Tekhnischeskoi Fiziki
- Pub Date:
- April 1989
- Bibcode:
- 1989PZhTF..15...68K
- Keywords:
-
- Aluminum Gallium Arsenides;
- High Electron Mobility Transistors;
- Quantum Wells;
- Semiconductors (Materials);
- Aluminum Arsenides;
- Electron Gas;
- Gallium Arsenides;
- Heterojunction Devices;
- Solid-State Physics