Picosecond superluminescence in GaAs during interband absorption of high-intensity short light pulses
Abstract
The effect of recombination superluminescence in semiconductors is investigated theoretically. It is shown that, in the case of interband absorption of high-intensity light pulses in a semiconductor, the development and self-quenching of recombination superluminescence may occur at picosecond time scales. Self-quenching results from the heating of nonequilibrium carriers and is accompanied by an increase in their concentration.
- Publication:
-
Pisma v Zhurnal Eksperimentalnoi i Teoreticheskoi Fiziki
- Pub Date:
- December 1989
- Bibcode:
- 1989PZETF..50..462K
- Keywords:
-
- Electromagnetic Absorption;
- Gallium Arsenides;
- Luminescence;
- Picosecond Pulses;
- Carrier Density (Solid State);
- Plasma Temperature;
- Quenching (Atomic Physics);
- Recombination Reactions;
- Temperature Dependence;
- Solid-State Physics