Feasibility of high-energy boron implantation for p-type retrograde well formation
Abstract
Electrical properties of high-energy boron implanted p-type retrograde wells are investigated as they pertain to implant and annealing conditions for submicron CMOS-LSI fabrication. n +/p junction and SiO 2/Si interface characteristics are examined in order to determine the optimal range for the conditions. In addition, the effectiveness of the retrograde well is demonstrated by improved latch-up immunity in a CMOS structure and a higher drain breakdown voltage threshold in MOSFETs.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- February 1989
- DOI:
- 10.1016/0168-583X(89)90291-7
- Bibcode:
- 1989NIMPB..37..749O