2 to 8 GHz high gain monolithic feedback amplifier
Abstract
The design of a 2 to 8 GHz high-gain feedback monolithic amplifier chip (SA-0167) is described, together with FET processing and experimental results. The SA-0167 chip, which measures 0.12 in. x 0.08 in., provides a nominal gain of 12 dB with an output power level flatness of + or - 0.5 dB, and an input/output impedance mismatch of 2:1 maximum across the frequency band. The chip is a two-stage design using a small gate periphery FET (0.5 micron x 300 microns) for optimum small signal gain performance, moderate output power, and low current consumption. The circuit shows a high degree of insensitivity to processing variations, resulting in high uniform yield. Schematic diagram of the feedback amplifier is included.
- Publication:
-
Microwave Journal
- Pub Date:
- August 1989
- Bibcode:
- 1989MiJo...32..127P
- Keywords:
-
- Feedback Circuits;
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Amplifiers;
- Network Synthesis;
- Impedance Matching;
- Power Gain;
- Voltage Controlled Oscillators;
- Electronics and Electrical Engineering