Multiwatt IMPATT power amplification for EHF applications
Abstract
An attempt was made to combine IMPATT diodes and amplifiers to meet the demands for high-power solid-state power generation at millimeter-wave frequencies. An EHF power source designed for application in the 43.5 to 45.5 GHz frequency range is described. It provides greater than 20 W of output power and uses 32 silicon double-drift devices. The unit, which includes an input x4 frequency multiplier and dc current regulators for the IMPATT devices, is packaged with an integral thermostatically controlled forced-air cooling system. The power source was developed to meet the requirements for EHF communications systems.
- Publication:
-
Microwave Journal
- Pub Date:
- April 1989
- Bibcode:
- 1989MiJo...32..107P
- Keywords:
-
- Avalanche Diodes;
- Extremely High Frequencies;
- Power Amplifiers;
- Solid State Devices;
- Equivalent Circuits;
- Field Effect Transistors;
- Millimeter Waves;
- Electronics and Electrical Engineering