pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
Abstract
A pnp-type GaAs inversion-base bipolar transistor was fabricated for the first time. The common emitter current gain obtained was β{=}1010 at 77 K. By measuring the FET mode operation of the GaAs IBT, it was confirmed that the two-dimensional electron gas really worked as a base of the transistor.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- April 1989
- DOI:
- 10.1143/JJAP.28.L538
- Bibcode:
- 1989JaJAP..28L.538M
- Keywords:
-
- Bipolar Transistors;
- Gallium Arsenides;
- P-N-P Junctions;
- Volt-Ampere Characteristics;
- Electron Gas;
- Field Effect Transistors;
- Power Gain;
- Electronics and Electrical Engineering