Electron and hole transport properties in GaAs-AlGaAs superlattices
Abstract
Time-resolved photoluminescence has been used to study the carrier transport in superlattice minibands (vertical transport). Transport of electrons and holes can be studied separately by using appropriate excitation densities and doping levels. Their diffusion coefficients are estimated and studied both as a function of the superlattice period and of the lattice temperature. The different behaviour of electrons and hole mobilities as a function of the SL period is evidenced. The temperature behaviour of the transport properties is similar in a superlattice and in the AlGaAs alloy with an equivalent Al concentration.
- Publication:
-
Journal of Luminescence
- Pub Date:
- January 1989
- DOI:
- 10.1016/0022-2313(89)90063-X
- Bibcode:
- 1989JLum...44..277L