Preparation and characterization of SiN x films epitaxially grown on Si(111) substrates
Abstract
SiN x films grown on Si(111) substrates by EB-evaporation of Si in an NH 3 ambient are studied with emphasis on its structural properties. The substrate temperature ( TS) ranges from 20 to 950°C, and the NH 3 pressure ( PNH 3) from 1×10 -6 to 8×10 -6 Torr. The N content of this film varies from 3×10 20 to 5×10 21 cm -3, depending on both the NH 3 pressure and the substrate temperature. The N content in the film increases with increasing temperature above 400 °C. Below 400 °C, the N content shows a tendency to decrease with increasing temperature. The N content also increases with increasing NH 3 pressure. Epitaxial growth does occur even when the N content is far above the solid solubility. The conditions for epitaxial growth are examined.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- February 1989
- DOI:
- 10.1016/0022-0248(89)90443-0
- Bibcode:
- 1989JCrGr..95..464I