Statistics of random telegraph signals in MOSFET's
Abstract
In random telegraph signals of small MOSFET's two different time constants are observed, τ c for capture into slow states and τ E for emission. It is impossible to explain the observed increase of τ E with increasing Fermi level by a simple trapping and detrapping mechanism. Statistics are calculated in this paper, where the electron enters the slow state not directly from the conduction band but from a fast interface state. During the long times τ c and τ E the fast interface state is in quasi-equilibrium with the conduction band. The proposed model is compared with experimental data from different authors.
- Publication:
-
Applied Surface Science
- Pub Date:
- October 1989
- DOI:
- 10.1016/0169-4332(89)90465-0
- Bibcode:
- 1989ApSS...39..486J