Characterization of a top-illuminated p-i-n diode with an indium tin oxide contact
Abstract
The characteristics of a new type of AlGaAs/GaAs p-i-n photodiode are reported. Indium tin oxide forms the contact to the upper AlGaAs layer and serves also as an antireflection coating. Our devices show very low dark currents (20-300 pA at 5 V reverse bias for devices of 20-200 μm diameter), high speed (full width at half maximum <60 ps), and high sensitivity (61% external quantum efficiency) at 1 V bias. A microwave analysis of the diode is presented.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 1989
- DOI:
- 10.1063/1.101170
- Bibcode:
- 1989ApPhL..54.2076Z
- Keywords:
-
- Aluminum Gallium Arsenides;
- Ito (Semiconductors);
- P-I-N Junctions;
- Photodiodes;
- Heterojunction Devices;
- Optical Data Processing;
- Quantum Efficiency;
- Electronics and Electrical Engineering