The CW GaAs TUNNETT diodes
Abstract
The results of recent theoretical and experimental investigations of GaAs tunnel-injection transit-time (TUNNETT) diodes are summarized. Consideration is given to the fundamental operating principles of TUNNETT diodes; the fabrication of a hyperabrupt TUNNETT diode; experimental data on IV characteristics, CW oscillation, pulsed oscillation, and TUNNETT/IMPATT mode switching in the hyperabrupt diodes; frequency and output power; and possible future improvements. Diagrams, drawings, graphs, and photographs are provided.
- Publication:
-
IN: Topics in millimeter wave technology. Volume 2 (A89-15167 04-33). San Diego
- Pub Date:
- 1988
- Bibcode:
- 1988tmwt....2....1M
- Keywords:
-
- Continuous Radiation;
- Gallium Arsenides;
- Semiconductor Diodes;
- Transit Time;
- Tunnel Diodes;
- Avalanche Diodes;
- Carrier Injection;
- Pulsed Radiation;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering