High efficiency Al0.38Ga0.62As solar cells
Abstract
The authors report on the characteristics of Al0.38Ga0.62As liquid-phase epitaxy layers determined using deep-level transient spectroscopy, surface photovoltage, and photoluminescence. Because the radiation hardness of the cell is important for space cells, the authors present the results of 1-MeV electron irradiation of large-area, 2 x 2-cm Al0.38Ga0.62As cells. The minority carrier lifetime was 13 ns, almost as long as the value (20 ns) found in GaAs. The Al0.38Ga0.62As layer gives a very strong photoluminescence signal, with two distinct peaks indicating that the material is close to defect-free.
- Publication:
-
20th IEEE Photovoltaic Specialists Conference
- Pub Date:
- 1988
- Bibcode:
- 1988pvs..conf..635L
- Keywords:
-
- Aluminum Gallium Arsenides;
- Carrier Lifetime;
- Liquid Phase Epitaxy;
- Photoluminescence;
- Solar Cells;
- Volt-Ampere Characteristics;
- Carrier Density (Solid State);
- Current Density;
- Electron Irradiation;
- Gallium Arsenides;
- Short Circuit Currents;
- Energy Production and Conversion