Picosecond transient reflectivity of unpinned gallium arsenide (100) surfaces
Abstract
Surface recombination was measured for photowashed and unwashed gallium arsenide using picosecond transient photoreflectance methods. The results for the washed surfaces clearly demonstrate slow surface recombination that is accurately described by an ambipolar diffusion model. The fast decay observed for unwashed samples implies rapid surface recombination involving a more complex mechanism.
- Publication:
-
Unknown
- Pub Date:
- February 1988
- Bibcode:
- 1988ptru.rept.....B
- Keywords:
-
- Crystal Lattices;
- Gallium Arsenides;
- Photoluminescence;
- Pinning;
- Reflectance;
- Crystal Defects;
- Dye Lasers;
- Fermi Surfaces;
- Field Effect Transistors;
- Recombination Reactions;
- Semiconductors (Materials);
- Solid-State Physics