Pyrolytic and laser photolytic growth of crystalline and amorphous germanium films from digermane (GE2H6)
Abstract
High-purity digermane (Ge sub 2 H sub 6, 5 percent in He) has been used to grow epitaxially oriented crystalline Ge films by pyrolysis. Amorphous Ge:H films also have been deposited by pyrolysis and ArF (193 nm) laser-induced photolysis. The amorphous-to-crystalline transition and the film's morphology were studied as a function of deposition conditions. The film's microstructure, strain and epitaxial quality were assessed using X-ray diffraction curves and scanning and transmission electron microscopy. It was found that commensurate, coherently strained epitaxial Ge films could be grown pyrolytically on (100) GaAs at low (0.05 to 40 m Torr) Ge sub 2 H sub 6 partial pressures for substrate temperatures above 380 C.
- Publication:
-
Presented at the Fall Meeting of the Materials Research Society
- Pub Date:
- November 1988
- Bibcode:
- 1988mrs..meet.....E
- Keywords:
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- Amorphous Materials;
- Crystal Growth;
- Crystallinity;
- Germanium;
- Photolysis;
- Pyrolysis;
- Deposition;
- Gallium Arsenides;
- Lasers;
- Microstructure;
- Transition Temperature;
- Solid-State Physics