X-ray response of GaAlAs/GaAs radiation hardened double: Heterostructure photodiode compared to Si:PIN photodiodes
Abstract
Requirements for continuous operation of photodiodes in the presence of nuclear radiation has led to the development of a novel GaAlAs/GaAs photodiode. Device structure and semiconductor properties of this design were optimized to balance the need for photodetection at lambda = 820 nm against unwanted excess photocurrents induced by ionizing radiation. To achieve radiation hardness the photodiode employs a double heterojunction device structure. The spectral response of this detector, 1 keV to 10 MeV, may offer unique opportunities for use in high-temperature plasma diagnostics compared to typical bare Si:PIN X-ray photodiode characteristics. Application of this GaAlAs/GaAs detector in a fiber optic link will be reviewed. Also, use of this detector in simple atomic-absorption-edge filtered X-ray detector channels is presented.
- Publication:
-
Presented at the 7th Topical Conference on High Temperature Plasma Diagnostics
- Pub Date:
- 1988
- Bibcode:
- 1988htpd.conf.....A
- Keywords:
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- Gallium Arsenides;
- Heterojunctions;
- Photodiodes;
- Radiation Hardening;
- Silicon;
- X Ray Analysis;
- Nuclear Radiation;
- Plasma Diagnostics;
- Semiconductor Devices;
- Solid-State Physics