Electron storage InAs/AlAsSb metal-insulator-semiconductor quantum well heterostructures

We report the first electrical characterization of an InAs/AlAsSb metal-insulator-semiconductor quantum well heterostructure fabricated on MBE grown material. Hysteresis was observed in the C-V data from which decay constants, associated with electron storage, of about 50 seconds at 77K were determined. Approximately 1 to 5 percent of the charge decayed much slower and exponentially in time and exhibited a thermal activation energy of near 0.9 eV.